Si memory device operated with a small number of electrons by using a single-electron-transistor detector

A proposal of new floating-dot memory st

A proposal of new floating-dot memory storing a small number of electrons with relatively long retention time at low voltage operations

✍ Tatsuya Usuki; Toshiro Futatsugi; Naoki Yokoyama 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 238 KB

We analytically investigate the trade-off between write errors caused by thermal fluctuation and the required number of electrons for floating-dot memory. Our evaluation shows that more than 7 electrons are necessary to maintain writing reliability in memory cells on the scale of ten-nanometers at r