A proposal of new floating-dot memory storing a small number of electrons with relatively long retention time at low voltage operations
✍ Scribed by Tatsuya Usuki; Toshiro Futatsugi; Naoki Yokoyama
- Book ID
- 104306666
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 238 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
We analytically investigate the trade-off between write errors caused by thermal fluctuation and the required number of electrons for floating-dot memory. Our evaluation shows that more than 7 electrons are necessary to maintain writing reliability in memory cells on the scale of ten-nanometers at room temperature. In this paper, we propose a new floating-dot memory that uses direct tunneling for low voltage write-and erase-operations, and exhibits relatively long retention time.
in the memory when the number of stored electrons is less than %/2. Accordingly, the error rate for the memory, Peel., is given by: C exp ( -PU,,X) .