✦ LIBER ✦

Time dependent breakdown characteristics of parylene dielectric in metal–insulator–metal capacitors

✍ Scribed by S. Gowrisanker; M.A. Quevedo-Lopez; H.N. Alshareef; B.E. Gnade

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 373 KB
Volume: 10
Category: Article
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2009.05.003

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Fracture-like nature of defects in the t

Fracture-like nature of defects in the time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors

✍ R.K. Bhan; S.K. Lomash; P.C. Mathur 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 249 KB

Time dependent dielectric breakdown char

Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2

✍ Toshihiro Matsuda; Takashi Ohzone; Takashi Hori 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 495 KB

A measurement technique of time-dependen

A measurement technique of time-dependent dielectric breakdown in MOS capacitors

✍ Seung P. Li 📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 361 KB

Improved electrical characteristics and

Improved electrical characteristics and reliability of amorphous InGaZnO metal–insulator–semiconductor capacitor with high κ HfOxNy gate dielectric

✍ Xiao Zou; Guojia Fang; Longyan Yuan; Xingsheng Tong; Xingzhong Zhao 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 809 KB

High j HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal-insulator-semiconductor (MIS) capacitors were investigated. Experimental resu

A measurement technique of time-dependen

A measurement technique of time-dependent dielectric breakdown in MOS capacitors : Seung P. Li. Microelectron. & Reliab.13, 209 (1974)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 117 KB

Deposition temperature dependence of ele

Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride

✍ M. B. Lee; I. K. Han; Y. J. Lee; J. I. Lee; K. N. Kang; H. Lim 📂 Article 📅 1993 🏛 Springer 🌐 English ⚖ 195 KB