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Thin film preparation by plasma and low pressure CVD in a horizontal reactor

✍ Scribed by CE Morosanu; V Soltuz


Book ID
108390282
Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
472 KB
Volume
31
Category
Article
ISSN
0042-207X

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Syntheses and optical properties of low-
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SiOx, TiOx and SiOx^TiOx mixed thin films were prepared by PECVD at a substrate temperature below 808C using tetraethoxysilane (TEOS) and ethyltrimethylsilane (ETMS) for SiOx and titaniumtetraisopropoxide (TTIP) for TiOx, respectively. Optimal deposition conditions for preparing SiOH free ETMS SiOx