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Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

✍ Scribed by P. Kordoš, M. Mikulics, R. Stoklas, K. Čičo, A. Dadgar, D. Grűtzmacher, A. Krost

Book ID: 118816376
Publisher: Springer US
Year: 2012
Tongue: English
Weight: 368 KB
Volume: 41
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-012-2096-4

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