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Thermal storage effects on AlGaN/GaN HEMT

✍ Scribed by Danesin, Francesca; Tazzoli, Augusto; Zanon, Franco; Meneghesso, Gaudenzio; Zanoni, Enrico; Cetronio, Antonio; Lanzieri, Claudio; Lavanga, Simone; Peroni, Marco; Romanini, Paolo

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
444 KB
Volume
48
Category
Article
ISSN
0026-2714

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera