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Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT

✍ Scribed by E. Kaminska; A. Piotrowska; A. Szczesny; A. Kuchuk; R. Lukasiewicz; K. Golaszewska; R. Kruszka; A. Barcz; R. Jakiela; E. Dynowska; A. Stonert; A. Turos


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
507 KB
Volume
2
Category
Article
ISSN
1862-6351

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