## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative highβΞΊ gate dielectric on hydrogenβterminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron Xβray Photoelectron Specβtroscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and
β¦ LIBER β¦
Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon
β Scribed by Gao, K. Y.; Speck, F.; Emtsev, K.; Seyller, Th.; Ley, L.
- Book ID
- 115528965
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 622 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0021-8979
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Interface of atomic layer deposited Al2O
β
Gao, K. Y. ;Speck, F. ;Emtsev, K. ;Seyller, Th. ;Ley, L. ;Oswald, M. ;Hansch, W.
π
Article
π
2006
π
John Wiley and Sons
π
English
β 559 KB
Structure of Al2O3thin layers synthesize
β
S. V. Bukin; A. S. Shulakov
π
Article
π
2007
π
Pleiades Publishing
π
English
β 154 KB
Modulation of atomic-layer-deposited Al2
β
D. Lei; X. Yu; L. Song; X. Gu; G. Li; D. Yang
π
Article
π
2011
π
American Institute of Physics
π
English
β 777 KB
Surface Passivation Performance of Atomi
β
Liu, Yanghui; Zhu, Liqiang; Guo, Liqiang; Zhang, Hongliang; Xiao, Hui
π
Article
π
2014
π
Allerton Press Inc
π
English
β 698 KB
Properties of Al2O3-films deposited on s
β
Per Ericsson; Stefan Bengtsson; Jarmo Skarp
π
Article
π
1997
π
Elsevier Science
π
English
β 293 KB
A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900Β°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i
Silicon surface passivation by ultrathin
β
G. Dingemans; R. Seguin; P. Engelhart; M. C. M. van de Sanden; W. M. M. Kessels
π
Article
π
2010
π
John Wiley and Sons
π
English
β 305 KB