𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structure of Al2O3thin layers synthesized on the silicon surface by atomic layer deposition

✍ Scribed by S. V. Bukin; A. S. Shulakov

Book ID
110202737
Publisher
Pleiades Publishing
Year
2007
Tongue
English
Weight
154 KB
Volume
1
Category
Article
ISSN
1027-4510

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Properties of Al2O3-films deposited on s
Properties of Al2O3-films deposited on silicon by atomic layer epitaxy
✍ Per Ericsson; Stefan Bengtsson; Jarmo Skarp πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 293 KB

A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900Β°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i

Interface of atomic layer deposited Al2O
Interface of atomic layer deposited Al2O3on H-terminated silicon
✍ Gao, K. Y. ;Speck, F. ;Emtsev, K. ;Seyller, Th. ;Ley, L. ;Oswald, M. ;Hansch, W. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 559 KB

## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative high‐κ gate dielectric on hydrogen‐terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X‐ray Photoelectron Spec‐troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and