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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

✍ Scribed by Lee, Byoung Hun; Kang, Laegu; Nieh, Renee; Qi, Wen-Jie; Lee, Jack C.

Book ID: 120379118
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 367 KB
Volume: 76
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.126214

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