Deep-submicrometer CMOS technology with reoxidized or annealed nitrided-oxide gate dielectrics prepared by rapid thermal processing

✍ Scribed by Hori, T.; Akamatsu, S.; Odake, Y.

• Book ID: 114534414
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 969 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.108220