Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

✍ Scribed by C.H Liu; S.J Chang; J.F Chen; J.S Lee; S.C Chen; U.H Liaw

• Book ID: 103844403
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 399 KB
• Volume: 107
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2003.12.005