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Thermal redistribution of boron implants in bulk silicon and SOS type structures

✍ Scribed by C. D. Maldonado; S. A. Louie


Book ID
104843893
Publisher
Springer
Year
1982
Tongue
English
Weight
979 KB
Volume
27
Category
Article
ISSN
1432-0630

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## Abstract We have studied iron distribution between a boron‐implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ layer was pronounced after each anneal. However, we were able to decrease the