Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers
✍ Scribed by Talvitie, Heli ;Yli-Koski, Marko ;Haarahiltunen, Antti ;Vähänissi, Ville ;Asghar, Muhammad Imran ;Savin, Hele
- Book ID
- 105366274
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 389 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We have studied iron distribution between a boron‐implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ layer was pronounced after each anneal. However, we were able to decrease the strong accumulation by combining a specific low‐high anneal with high bulk defect density. We determined the dominant mechanism behind the accumulation of iron into the p+ layer, which turned out to be precipitation instead of segregation. The results can be helpful when choosing the internal gettering steps for both microelectronic (IC) and multicrystalline silicon photovoltaic (PV) processes.