The triple Siδ-doped GaAs structure
✍ Scribed by E. Ozturk; H. Sari; Y. Ergun; I. Sokmen
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 240 KB
- Volume
- 80
- Category
- Article
- ISSN
- 1432-0630
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We have theoretically investigated the subband structure of single Si δ-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the δ-doping concentration, the δ-layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two
In this paper we report abnormal non-ohmic behaviour observed in Si \(\delta\)-doped GaAs. We have performed measurements in Hall bar and Van der Pauw geometries in which electron transport phenomena can be studied by looking into the dependence of the device resistance \(\boldsymbol{R}_{x x}\) on t