In this paper we report abnormal non-ohmic behaviour observed in Si \(\delta\)-doped GaAs. We have performed measurements in Hall bar and Van der Pauw geometries in which electron transport phenomena can be studied by looking into the dependence of the device resistance \(\boldsymbol{R}_{x x}\) on t
Comparison of Si δ-doping with homogeneous doping in GaAs
✍ Scribed by K. Köhler; P. Ganser; M. Maier
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 329 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0022-0248
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