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Minibands of p-type δ-doping superlattices in GaAs

✍ Scribed by L.E. Ramos; G.M. Sipahi; L.M.R. Scolfaro; R. Enderlein; J.R. Leite

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
248 KB
Volume
22
Category
Article
ISSN
0749-6036

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✦ Synopsis

The minibands of p-type δ-doping superlattices (SLs) in GaAs are studied in dependence on acceptor sheet doping concentrations N A and SL periods d. The calculations rely on effective mass theory, applied to the 8 valence band hole gas. Hole-hole interaction is selfconsistently taken into account, including the exchange-correlation which is considered in the local density approximation. The miniband edges of the various heavy and light hole bands, the Fermi level, and the potential well barriers and bottoms are plotted against N A with d as parameter and against d with N A as parameter. In this way, we provide complete band structure information for optical and transport measurements on p-type δ-doping superlattices.

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