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Rigorous hole band structure calculations of p-type δ-doping superlattices in silicon

✍ Scribed by A.L Rosa; L.M.R Scolfaro; J.R Leite; G.M Sipahi

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
77 KB
Volume
25
Category
Article
ISSN
0749-6036

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✦ Synopsis

Self-consistent hole band structure calculations are performed for p-type δ-doped quantum wells and superlattices (SLs) in Si by solving the six-band Luttinger-Kohn effective mass equations, together with Poisson equation, in a plane-wave representation. Nonparabolicities due to couplings between heavy, light, and spin-orbit split bands are fully taken into consideration. Exchange and correlation effects within the multicomponent hole gas are included in the local density approximation. Results are presented for hole band structures, Fermi levels, and potentials for p-type δ-doping SLs, in which the acceptor sheet doping concentration and SL period were varied. Our results are compared with the available experimental data.

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We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro ¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density