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Fano-like electron–phonon interference in δ-doping GaAs superlattices

✍ Scribed by Yu.A. Pusep; M.T.O. Silva; J.C. Galzerani; S.W. da Silva; L.M.R. Scolfaro; R. Enderlein; A.A. Quivy; A.P. Lima; J.R. Leite


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
64 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis


The interaction between electron excitations and LO phonons is studied by Raman scattering in δ-doping GaAs superlattices. The Raman spectra measured close to the E 0 + 0 resonance of GaAs present Fano-like coupling of the LO phonons with the quasicontinuum single-particle electron excitations. Due to the self-consistent origin of the electron-energy spectrum in δ-doping superlattices the resonance of the Fano interference was found to be strongly dependent on the electron density as well as the excitation energy.


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Aδ-doped In0.24Ga0.76As/GaAs pseudomorph
✍ Ching-Sung Lee; Wei-Chou Hsu; Sheng San Li; Pin Ho 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 174 KB

A new δ-doped In 0.24 Ga 0.76 As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron m