A new δ-doped In 0.24 Ga 0.76 As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron m
Fano-like electron–phonon interference in δ-doping GaAs superlattices
✍ Scribed by Yu.A. Pusep; M.T.O. Silva; J.C. Galzerani; S.W. da Silva; L.M.R. Scolfaro; R. Enderlein; A.A. Quivy; A.P. Lima; J.R. Leite
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 64 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The interaction between electron excitations and LO phonons is studied by Raman scattering in δ-doping GaAs superlattices. The Raman spectra measured close to the E 0 + 0 resonance of GaAs present Fano-like coupling of the LO phonons with the quasicontinuum single-particle electron excitations. Due to the self-consistent origin of the electron-energy spectrum in δ-doping superlattices the resonance of the Fano interference was found to be strongly dependent on the electron density as well as the excitation energy.
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