We have theoretically investigated the subband structure of single Si δ-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the δ-doping concentration, the δ-layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two
✦ LIBER ✦
Subband structure of multiple Si δ-doped planes in GaAs
✍ Scribed by A.J. Dewdney; S. Holmes; H. Yu; M. Fahy; R. Murray
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 263 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0749-6036
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We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro ¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density