𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electronic subband of single Siδ-doped GaAs structures

✍ Scribed by E Ozturk; Y Ergun; H Sari; I Sokmen

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
324 KB
Volume
28
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

✦ Synopsis

We have theoretically investigated the subband structure of single Si δ-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the δ-doping concentration, the δ-layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two different models: (i) a uniform distribution and (ii) a nonuniform distribution. In this paper, the nonuniform distribution is different from the Gaussian distribution use of other authors. The electronic structures have been calculated by solving the Schrödinger and Poisson equations self-consistently. We thus find the confining potential, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy.

📜 SIMILAR VOLUMES

Nonlinear electron transport in Si δ-dop
Nonlinear electron transport in Si δ-doped GaAs
✍ G. Li; W. Xu; P. Hawker; A.A. Allerman; N. Hauser; C. Jagadish 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 210 KB

In this paper we report abnormal non-ohmic behaviour observed in Si \(\delta\)-doped GaAs. We have performed measurements in Hall bar and Van der Pauw geometries in which electron transport phenomena can be studied by looking into the dependence of the device resistance \(\boldsymbol{R}_{x x}\) on t

Transmission Electron Microscopy of Be I
Transmission Electron Microscopy of Be Implanted Si-Doped GaAs
✍ Kroon, R.E. ;Neethling, J.H. ;Zolper, J.C. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 264 KB

Be ions were implanted into degenerately Si-doped GaAs at 300 keV to a dose of 10 15 cm À2 . The region near the projected range remained crystalline, and subthreshold defects formed at this depth after annealing at 450-500 C. The defects are identified as circular prismatic perfect interstitial loo

Electronic Structure of B δ-Doped Si Qua
Electronic Structure of B δ-Doped Si Quantum Wells at Room Temperature: The High Density Limit
✍ L.M. Gaggero-Sager; M.E. Mora-Ramos 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 128 KB 👁 1 views

The electronic structure of a d-doped quantum well of B in Si is studied at room temperature in the case of high impurity concentration. The calculation is carried out self-consistently in the framework of the Hartree approximation. A model with three independent hole bands is considered. The energy

Electronic and Structural Properties of
Electronic and Structural Properties of As-Grown and α-Particle Irradiated GaAs Doping Superlattices
✍ H.W. Kunert; D.J. Brink; A. Donnadieu; K. Zeaiter; C. Llinares; J. Allegre; G. L 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 244 KB 👁 1 views

Using atomic force microscopy (AFM), low-temperature photoluminescence (both CW and timeresolved) as well as Raman spectroscopy, we have performed a comparative investigation of asgrown and a-particle irradiated GaAs doping superlattices. From AFM no evidence of structural damages was found. On the