Electronic and Structural Properties of As-Grown and α-Particle Irradiated GaAs Doping Superlattices

✍ Scribed by H.W. Kunert; D.J. Brink; A. Donnadieu; K. Zeaiter; C. Llinares; J. Allegre; G. Levêque; J. Camassel

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 244 KB
• Volume: 210
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199812)210:2<699::aid-pssb699>3.0.co;2-i

✦ Synopsis

Using atomic force microscopy (AFM), low-temperature photoluminescence (both CW and timeresolved) as well as Raman spectroscopy, we have performed a comparative investigation of asgrown and a-particle irradiated GaAs doping superlattices. From AFM no evidence of structural damages was found. On the opposite, from optical investigations and depending strongly on the dose of a-particle irradiation, the electronic properties were found to vary. At low dose, the main PL signal remained but decreased in intensity. At the same time it shifted towards low energy. At high dose, the PL answer completely disappeared. After annealing, partial recovery was found. All together this indicates that, upon bombardment and annealing, first one opens and next closes new (non-radiative) defect-induced recombination paths.