Electronic Structure of B δ-Doped Si Quantum Wells at Room Temperature: The High Density Limit
✍ Scribed by L.M. Gaggero-Sager; M.E. Mora-Ramos
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 128 KB
- Volume
- 210
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
The electronic structure of a d-doped quantum well of B in Si is studied at room temperature in the case of high impurity concentration. The calculation is carried out self-consistently in the framework of the Hartree approximation. A model with three independent hole bands is considered. The energy levels and the occupation numbers of the discrete states are reported. Inclusion of the split-off band improves the results previously obtained within a two-independent hole band model, showing a difference of approximately 20 meV in the energy levels. The results agree quite well with the available experimental data for this system.