𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The self-consistent calculation of Si δ-doped GaAs structures

✍ Scribed by E. Ozturk; Y. Ergun; H. Sari; I. Sokmen

Publisher
Springer
Year
2001
Tongue
English
Weight
123 KB
Volume
73
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electronic subband of single Siδ-doped G
Electronic subband of single Siδ-doped GaAs structures
✍ E Ozturk; Y Ergun; H Sari; I Sokmen 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 324 KB

We have theoretically investigated the subband structure of single Si δ-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the δ-doping concentration, the δ-layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two

Self-consistent calculation of transport
Self-consistent calculation of transport properties in Si GaAs quantum wells as a function of the temperature
✍ L.M. Gaggero-Sager; G.G. Naumis; M.A. Muñoz-Hernandez; V. Montiel-Palma 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 362 KB

The electronic structure of a delta-doped quantum well of Si in GaAs is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the mobility trends are reported for various impurity densities. As a conse