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The thermopower of a high-mobility Si-MOSFET around the metal-insulator transition

✍ Scribed by R Fletcher; V.M Pudalov; M Tsaousidou; P.N Butcher

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
151 KB
Volume
6
Category
Article
ISSN
1386-9477

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πŸ“œ SIMILAR VOLUMES

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We investigated the metal-insulator transition of uncompensated phosphorous-doped silicon (Si:P) by the stress tuning technique. We measured the variation of the length of the sample with the stress around the metal-insulator transition. If the length of the sample behaved anomalously at the transit

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%i Knight shift measurements have been carried out on samples of Si:P and Si:P,B in the vicinity of the metal-insulator transition at temperatures of 4.3 K and 1.5 K. The Knight shift appears to change in a continuous way through n . Comparison of the results for the uncompensated and compensated s