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The 29Si knight shift in Si:P and Si:P,B in the vicinity of the metal-insulator transition

✍ Scribed by M.J.R. Hoch; U. Thomanschefsky; D.F. Holcomb

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
226 KB
Volume
165-166
Category
Article
ISSN
0921-4526

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✦ Synopsis

%i Knight shift measurements have been carried out on samples of Si:P and Si:P,B in the vicinity of the metal-insulator transition at temperatures of 4.3 K and 1.5 K. The Knight shift appears to change in a continuous way through n . Comparison of the results for the uncompensated and compensated samples reveals that, for a give: n/nc value, is significantly lower in Si:P,B than in Si:P. The difference in values increases as the transition is approached from the metallic side. Possible explanations for this difference in behaviour are briefly discussed.

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