Suppression of universal conductance fluctuations by an electric field in doped Si(P,B) near the metal–insulator transition
✍ Scribed by A.K. Raychaudhuri; Swastik Kar; Arindam Ghosh
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 103 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
We present results of 1=f noise measurements at low frequency (10 -3 ¡ f ¡ 10 Hz) and at low temperatures (1 K ¡ T ¡ 20 K) in single crystals of Si doped with P and B. The doping concentration n is close to the critical composition nc of the metal-insulator transition (MIT). We observed that the noise which originates from the universal conductance uctuation, can be suppressed e ectively by an electric ÿeld of moderate magnitude at T ¡ 20 K. Near the critical region of MIT (n ≈ nc) the suppression is extremely large. We show that this e ect can originate by dephasing arising from an electric ÿeld in presence of electron-electron interaction.