Specific heat of Si:P in the vicinity of the metal-insulator transition

✍ Scribed by MJR Hoch; C Kasl

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 143 KB
• Volume: 194-196
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)90862-1

✦ Synopsis

The specific heat has been calculated as a function of temperature and magnetic field for Si:P on the insulating side of the metal--insulator transition. A small cluster approach, involving spin pairs or triads, is used and the predictions are found to agree fairly well with available experimental results in fields up to 5.7 T for n/nc < 0.3. Higher concentrations require a reduced number of effective spins.