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Measurement of Young's modulus of phosphorous-doped silicon around the metal-insulator transition

✍ Scribed by Yoshihiro Shimazu; Seiichiro Ikehata

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
141 KB
Volume
194-196
Category
Article
ISSN
0921-4526

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✦ Synopsis

We investigated the metal-insulator transition of uncompensated phosphorous-doped silicon (Si:P) by the stress tuning technique. We measured the variation of the length of the sample with the stress around the metal-insulator transition. If the length of the sample behaved anomalously at the transition, the critical exponent studied by stress tuning would have to be reexamined. The stress dependence of the length of the sample shows no anomaly around the transition point. The length changes linearly with the stress, and the Young's modulus is the same both in the metallic and insulating sides within the experimental precision.

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