✦ LIBER ✦

Critical scattering in the vicinity of the metal–insulator transition in Mn-doped GaAs

✍ Scribed by A. Varpula; S. Novikov; P. Kuivalainen

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 214 KB
Volume: 249
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.201147460

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo–Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self‐consistent Born approximation. The model explains well the measured resistivity in Mn‐doped GaAs as a function of temperature, doping concentration, and magnetic field.

📜 SIMILAR VOLUMES

Giant Negative Magnetoresistance of (Ga,

Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal–Insulator Transition

✍ A. Oiwa; S. Katsumoto; A. Endo; M. Hirasawa; Y. Iye; H. Ohno; F. Matsukura; A. S 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB 👁 2 views

Critical Behaviour of n-ZnSe Parameters

Critical Behaviour of n-ZnSe Parameters in the Vicinity of the Metal—Insulator Transition

✍ V. A. Kasiyan; D. D. Nedeoglo; A. V. Simashkevich; I. N. Timchenko 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 677 KB

Magnetotransport in mesoscopic carbon ne

Magnetotransport in mesoscopic carbon networks in the vicinity of metal–insulator transition

✍ V.K. Ksenevich; J. Galibert; V.A. Samuilov 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 348 KB

Specific heat of Si:P in the vicinity of

Specific heat of Si:P in the vicinity of the metal-insulator transition

✍ MJR Hoch; C Kasl 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 143 KB

The specific heat has been calculated as a function of temperature and magnetic field for Si:P on the insulating side of the metal--insulator transition. A small cluster approach, involving spin pairs or triads, is used and the predictions are found to agree fairly well with available experimental r

Spin-Peierls transition in the Ge:As sem

Spin-Peierls transition in the Ge:As semiconductor impurity system in the vicinity of the insulator–metal phase transition

✍ A.I. Veinger; A.G. Zabrodskii; T.V. Tisnek; S.I. Goloshchapov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 176 KB

Resistance scaling 1n inhomogeneous medi

Resistance scaling 1n inhomogeneous media in the vicinity of a metal-insulator Transition

✍ O.I. Barkalov; I.T. Belash; S.E. Esipov; V.F. Gantmakher; E.G. Ponyatovskii; V.M 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 215 KB

FI(:aling c'elatton between residual % and temperature-dependent R1 parts of the sample electrical ~c..isi~nce in the vicinity of a metal insulator transition can be a guide in examining the struc-0 Lir~' 0;' tiw material. In tne relation h',:'l(H,!-the exponent value ~i=l is typical for a random mi