## Abstract We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the
Critical Behaviour of n-ZnSe Parameters in the Vicinity of the Metal—Insulator Transition
✍ Scribed by V. A. Kasiyan; D. D. Nedeoglo; A. V. Simashkevich; I. N. Timchenko
- Publisher
- John Wiley and Sons
- Year
- 1989
- Tongue
- English
- Weight
- 677 KB
- Volume
- 154
- Category
- Article
- ISSN
- 0370-1972
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