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Hopping in Si-MOSFETs near the 2D metal–insulator transition

✍ Scribed by Nam-Jung Kim; S. Washburn


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
84 KB
Volume
18
Category
Article
ISSN
1386-9477

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A Possible Role of the D– Band in Hoppin
✍ V.I. Kozub 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 101 KB 👁 2 views

It is demonstrated that the upper Hubbard band (UHB) can play an important role in the hopping conductivity; 2D geometry and vicinity of the metal-insulator transition emphasize this role. A simple model for the recently observed metal-insulator transition is suggested. The model starts from the ins