๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The study of selectivity in silicon selective epitaxial growth

โœ Scribed by Liang Ye; B.M. Armstrong; H.S. Gamble


Book ID
103599175
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
431 KB
Volume
25
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Selective epitaxial growth of silicon in
โœ M. Kastelic; I. Oh; C.G. Takoudis; J.A. Friedrich; G.W. Neudeck ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 461 KB

Selective epitaxial growth (SEG) of silicon opens new avenues in electronic device design by allowing vertical (three dimensional) integrated circuits to be fabricated and isolation between devices to be vastly improved. In this work selective epitaxial silicon deposition is performed in an RF-heate

Selective Epitaxial Deposition of Silico
โœ JOYCE, B. D.; BALDREY, J. A. ๐Ÿ“‚ Article ๐Ÿ“… 1962 ๐Ÿ› Nature Publishing Group ๐ŸŒ English โš– 292 KB