๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Selective polycrystalline and epitaxial growth by silicon molecular beam epitaxy

โœ Scribed by C.J. Gibbings; J.R. Davis; M. Hockly; C.G. Tuppen


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
380 KB
Volume
184
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


In situ studies of epitaxial silicon gro
โœ B. A. Joyce; J. Zhang; A. G. Taylor; M. H. Xie; J. M. Fernรกndez; A. K. Lees ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 297 KB ๐Ÿ‘ 1 views

The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ยฎlms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of reยฏection high-energy ele

Silicon-Based Heterostructures: Strained
โœ M. A. Herman ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 183 KB ๐Ÿ‘ 1 views

The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti