๐”– Bobbio Scriptorium
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The pattern dependence of selectivity in low pressure selective epitaxial silicon growth

โœ Scribed by J. T. Fitch; D. J. Denning; D. Beard


Book ID
112817448
Publisher
Springer US
Year
1992
Tongue
English
Weight
988 KB
Volume
21
Category
Article
ISSN
0361-5235

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๐Ÿ“œ SIMILAR VOLUMES


Selective epitaxial growth of silicon in
โœ M. Kastelic; I. Oh; C.G. Takoudis; J.A. Friedrich; G.W. Neudeck ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 461 KB

Selective epitaxial growth (SEG) of silicon opens new avenues in electronic device design by allowing vertical (three dimensional) integrated circuits to be fabricated and isolation between devices to be vastly improved. In this work selective epitaxial silicon deposition is performed in an RF-heate