Selective epitaxial growth (SEG) of silicon opens new avenues in electronic device design by allowing vertical (three dimensional) integrated circuits to be fabricated and isolation between devices to be vastly improved. In this work selective epitaxial silicon deposition is performed in an RF-heate
โฆ LIBER โฆ
Application of selective silicon epitaxial growth for CMOS technology
โ Scribed by Nagao, S.; Higashitani, K.; Akasaka, Y.; Nakata, H.
- Book ID
- 114595729
- Publisher
- IEEE
- Year
- 1986
- Tongue
- English
- Weight
- 917 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0018-9383
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