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Application of epitaxial crystal growth on silicon radiation detectors

โœ Scribed by K. Husimi; S. Ohkawa; C. Kim; S. Osada; F. Shiraishi


Publisher
Elsevier Science
Year
1982
Weight
427 KB
Volume
196
Category
Article
ISSN
0167-5087

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Liquid Phase Epitaxial Growth of Silicon
โœ S. Berger; S. Quoizola; A. Fave; A. Ouldabbes; A. Kaminski; S. Perichon; N-E. Ch ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 198 KB ๐Ÿ‘ 2 views

The aim of this experiment is to grow a thin silicon layer (<50ยตm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 ยตm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi