Thin dE/dx detectors of uniform thickness made on epitaxial silicon

Influence of Profile Parameters on the I

Influence of Profile Parameters on the IR Thickness Measurement of Thin Silicon Epitaxial Layers

✍ Dipl.-Ing. Ch. Quick; Dr. E. Hild; Dr.-Ing. P. Schley; Dr.-Ing. J. Quick 📂 Article 📅 1991 🏛 John Wiley and Sons 🌐 English ⚖ 323 KB 👁 2 views

For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi