✦ LIBER ✦

The reaction of SiH2 with no in the IR laser photochemistry of SiH4 - no mixtures

✍ Scribed by Takaaki Dohmaru; F.W. Lampe

Book ID: 108043234
Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 696 KB
Volume: 41
Category: Article
ISSN: 1010-6030
DOI: 10.1016/1010-6030(88)87001-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Kinetics of the SiH3 + O2 and SiH3 + NO2

Kinetics of the SiH3 + O2 and SiH3 + NO2 reactions

✍ Robert W. Quandt; John F. Hershberger 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 551 KB

State-selective spectroscopic detection

State-selective spectroscopic detection of reaction products (SiH2, Si) in the IR laser decomposition of SiH4

✍ Elisabetta Borsella; Roberta Fantoni 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 425 KB

The decomposition mechanism of SiHa('B, ) formed after IR multiple-photon dissociation of SiH., has been investigated by simultaneous acquisition of spontaneous chemiluminescence of SiHr radicals and state-selective two-photon laser-induced fluorescence spectra of the atomic silicon produced Evidenc

Kinetics of the reactions of HSiCl with

Kinetics of the reactions of HSiCl with SiH4 and SiH2Cl2

✍ Pauline Ho; William G. Breiland; Robert W. Carr 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 409 KB

Laser-excited fluorescence detection of HSiCl was used to measure the room-temperature kinetics of the reactions of HSiCl with SiH, and Sic&HZ. An upper bound was also obtained for the HSiCl+Hz rate coefficient. Rate coefftcients for insertion of HSiCl into SiH., and SiC12H2 are 3-4 orders of magnit

Monosilylphosphine formation by rapid si

Monosilylphosphine formation by rapid silylene insertion in the IR photochemistry of SiH4PH3 mixtures

✍ J. Blazejowski; F.W. Lampe 📂 Article 📅 1982 🏛 Elsevier Science ⚖ 616 KB

Resonance CARS detection of SiC2as react

Resonance CARS detection of SiC2as reaction intermediate in IR laser synthesis of SiC from SiH4/hydrocarbon mixtures

✍ R. Fantoni; F. Bijnen; N. Djurić; S. Piccirillo 📂 Article 📅 1991 🏛 Springer 🌐 English ⚖ 869 KB

Rate constant measurements for reactions

Rate constant measurements for reactions of SiH3 with O2, NO and NO2 using time-resolved infrared diode laser spectroscopy

✍ Ko-ichi Sugawara; Taisuke Nakanaga; Harutoshi Takeo; Chi Matsumura 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 470 KB

The rate constants for the reactions SiH,+02, SiH,+NO, and StH,+NO+N, have been measured over the pressure range I-10 Torr at 300 K, by monitoring a SiHl absorption line at 7 19.93 I cm ' using time-resolved diode laser spectroscopy. SiH3 radicals were prepared by pulsed CO2 laser photolysis of CClz