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Rate constant measurements for reactions of SiH3 with O2, NO and NO2 using time-resolved infrared diode laser spectroscopy

✍ Scribed by Ko-ichi Sugawara; Taisuke Nakanaga; Harutoshi Takeo; Chi Matsumura

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 470 KB
Volume: 157
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(89)87253-7

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✦ Synopsis

The rate constants for the reactions SiH,+02, SiH,+NO, and StH,+NO+N, have been measured over the pressure range I-10 Torr at 300 K, by monitoring a SiHl absorption line at 7 19.93 I cm ' using time-resolved diode laser spectroscopy. SiH3 radicals were prepared by pulsed CO2 laser photolysis of CClzF in SiH,: CCl,F+nhv-•CClzF+CI, CI+SiH,+HCI+SiH,. Analysis ofthe pseudo-first-order decay of SiH3 provided rate constants of (1.3+0.3) X 1W" and (5.1 kO.9) X lo-" cm' molecule-' s-l ( + 2~) for the reactions with Oz and N02, respectively, and (8.2 + 0.9 ) x 10m30 cm' molecule ~' s-' ( t 2~) for the reaction SiH,tNOtN,

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