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The properties of a-SiGe:H films deposited by 55 kHz PECVD

✍ Scribed by Boris G. Budaguan; Alexei A. Sherchenkov; Grigory L. Gorbulin

Book ID: 117145397
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 240 KB
Volume: 297
Category: Article
ISSN: 0022-3093
DOI: 10.1016/s0022-3093(01)00928-0

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## Abstract The effect of bias voltage on characteristics of ZnO thin films deposited by the electron cyclotron resonance plasma‐enhanced chemical vapor deposition (ECR‐PECVD) method was investigated. The structural, optical and electrical properties of ZnO thin films were studied as a function of