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Mechanisms of the growth of nanocrystalline Si:H films deposited by PECVD

✍ Scribed by Atif Mossad Ali

Book ID: 116669557
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 205 KB
Volume: 352
Category: Article
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2006.03.065

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## Abstract Boron‐doped nanocrystalline silicon (nc‐Si:H) films were deposited by plasma‐enhanced chemical vapor deposition (PECVD). A variety of techniques, including X‐ray diffraction (XRD), Raman scattering (RS), UV–Vis–NIR spectroscopy and conductivity measurement were used to characterize the