Optical properties and crystallinity of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by rf-PECVD
β Scribed by Goh Boon Tong; Zarina Aspanut; Muhamad Rasat Muhamad; Saadah Abdul Rahman
- Book ID
- 113940941
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 835 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0042-207X
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## Abstract Boronβdoped nanocrystalline silicon (ncβSi:H) films were deposited by plasmaβenhanced chemical vapor deposition (PECVD). A variety of techniques, including Xβray diffraction (XRD), Raman scattering (RS), UVβVisβNIR spectroscopy and conductivity measurement were used to characterize the
We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not