✦ LIBER ✦

Preparation and photoluminescence of nanocrystalline Si-rich silicon oxide films by PECVD

✍ Scribed by Guohua Shi; Gang Xu; Gaorong Han

Book ID: 113790072
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 260 KB
Volume: 61
Category: Article
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2006.04.080

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A study on photoluminescence from Si-ric

A study on photoluminescence from Si-rich silicon oxide films and Ge-containing silicon oxide films

✍ S.Y Ma; G.G Qin; Y.Y Wang 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 560 KB

Residual stress in amorphous and nanocry

Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution

✍ Y.Q. Fu; J.K. Luo; S.B. Milne; A.J. Flewitt; W.I. Milne 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 415 KB

Annealing temperature dependence of phot

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

✍ Chao, D.S.; Liang, J.H. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 613 KB

Spectroscopic studies on preparation of

Spectroscopic studies on preparation of silicon oxide films by PECVD using organosilicon compounds

✍ Inoue, Y; Takai, O 📂 Article 📅 1996 🏛 Institute of Physics 🌐 English ⚖ 167 KB

Structure and UV photoluminescence of na

Structure and UV photoluminescence of nanocrystalline ZnO films prepared by thermal oxidation of ZnS films

✍ X.D. Gao; X.M. Li; W.D. Yu 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 228 KB

Mechanism of photoluminescence of silico

Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge

✍ T.V. Torchynska; J. Aguilar-Hernandez; L. Schacht Hernández; G. Polupan; Y. Gold 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 380 KB

Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 8C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence