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Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge

✍ Scribed by T.V. Torchynska; J. Aguilar-Hernandez; L. Schacht Hernández; G. Polupan; Y. Goldstein; A. Many; J. Jedrzejewski; A. Kolobov

Book ID
104305863
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
380 KB
Volume
66
Category
Article
ISSN
0167-9317

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✦ Synopsis

Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 8C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots (QDs) in silicon oxide films are analyzed for the photoluminescence mechanism study in the above-mentioned systems.

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