## Abstract Boronβdoped nanocrystalline silicon (ncβSi:H) films were deposited by plasmaβenhanced chemical vapor deposition (PECVD). A variety of techniques, including Xβray diffraction (XRD), Raman scattering (RS), UVβVisβNIR spectroscopy and conductivity measurement were used to characterize the
Optical properties of nanocrystalline silicon deposited by PECVD
β Scribed by M. R. Esmaeili-Rad; A. Sazonov; A. G. Kazanskii; A. A. Khomich; A. Nathan
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 466 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0957-4522
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The effect of bias voltage on characteristics of ZnO thin films deposited by the electron cyclotron resonance plasmaβenhanced chemical vapor deposition (ECRβPECVD) method was investigated. The structural, optical and electrical properties of ZnO thin films were studied as a function of
Plasma-polymerized films of vinyltriethoxysilane were prepared by plasma-enhanced chemical vapor deposition using an RF (13.56 MHz) helical coupling plasma system operated in a pulsed regime. Thin films deposited under the same deposition conditions but with different thicknesses (9.5 nm-10.5 Β΅m) we