RBS study of amorphous silicon carbide films deposited by PECVD
β Scribed by J. Huran; I. Hotovy; A. P. Kobzev; N. I. Balalykin
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 570 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0011-4626
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The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well
Thin silicon carbide (SiCI films were prepared by plasma enhanced chemical vapour deposition PECVDI. The structural properties of Sic films were investigated by IR, RBS, and ERD measurement techniques. The results showed that the films contain the typical features found in hydrogenated amorphous Sic