## Abstract Boron‐doped nanocrystalline silicon (nc‐Si:H) films were deposited by plasma‐enhanced chemical vapor deposition (PECVD). A variety of techniques, including X‐ray diffraction (XRD), Raman scattering (RS), UV–Vis–NIR spectroscopy and conductivity measurement were used to characterize the
Electrical and optical properties of ZnO films deposited by ECR-PECVD
✍ Scribed by Choi, S. Y. ;Kang, M. J. ;Park, T. J. ;Tap, R. ;Schoemaker, S. ;Willert-Porada, M.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 304 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
The effect of bias voltage on characteristics of ZnO thin films deposited by the electron cyclotron resonance plasma‐enhanced chemical vapor deposition (ECR‐PECVD) method was investigated. The structural, optical and electrical properties of ZnO thin films were studied as a function of O~2~/dielthylzinc ratio and applied bias voltage. Applying –600 V bias voltage on the substrate during deposition can reduce the sheet resistance by a magnitude of 10^4^ without deteriorating the optical transmittance. The optical band gap was increased from 3.36 to 3.54 eV with bias voltage increase. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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