The nature of photoluminescence from plastically deformed silicon
โ Scribed by Suezawa, M. ;Sumino, K.
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 497 KB
- Volume
- 78
- Category
- Article
- ISSN
- 0031-8965
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๐ SIMILAR VOLUMES
The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu
## Abstract Decay of the oxygen solid solution in silicon during annealing at 550โ700 ยฐC is studied by the IR absorption technique in the single crystalline samples subjected to the plastic deformation to a high dislocation density at 680 ยฐC. The deformation is shown to significantly enhance the ra