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Photoluminescence of dislocations in plastically deformed GaN

✍ Scribed by I. Yonenaga; S. Itoh; H. Makino; T. Goto; T. Yao

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
202 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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Dislocation mobility and photoluminescen
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✍ I. Yonenaga; S. Itoh; T. Goto πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 191 KB

The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu

Manifestation of edge dislocations in ph
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A GaN layer was grown by molecular beam epitaxy on a freestanding GaN template prepared by hydride vaporphase epitaxy. Two characteristic areas have been found in the overgrown layer: a region nearly free from dislocations and a region with the density of the edge dislocations of $5 Γ‚ 10 9 cm Γ€2 , a